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| PD - 95337 IRLL2703PBF l l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET D VDSS = 30V RDS(on) = 0.045 G S ID = 3.9A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. SOT-223 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 5.5 3.9 3.1 16 2.1 1.0 8.3 16 180 3.9 0.1 5.0 -55 to + 150 Units A W W mW/C V mJ A mJ V/ns C Thermal Resistance Parameter RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)** Typ. 90 50 Max. 120 60 Units C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 05/28/04 IRLL2703PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 --- --- --- --- 1.0 5.9 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.06 --- --- --- --- --- --- --- --- --- 9.3 2.3 5.1 7.4 24 6.9 14 530 230 95 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.045 VGS = 10V, I D = 3.9A 0.060 VGS = 5.0V, ID = 3.1A 0.070 VGS = 4.0V, ID = 2.0A 2.4 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 2.3 A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 125C 100 VGS = 16V nA -100 VGS = -16V 14 ID = 2.3A 3.4 nC VDS = 24V 7.6 VGS = 5.0V, See Fig. 6 and 9 --- VDD = 15V --- ID = 2.3A ns --- RG = 6.2 --- RD = 6.5 , See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol 3.9 showing the A integral reverse 16 p-n junction diode. --- --- 1.0 V TJ = 25C, IS = 2.3A, VGS = 0V --- 42 63 ns TJ = 25C, IF = 2.3A --- 62 94 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 2.3A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 24 mH RG = 25, IAS = 3.9A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRLL2703PBF 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 10 1 1 0.1 2.7V 20s PULSE WIDTH TJ = 25 C 1 10 100 2.7V 0.01 0.1 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 3.9A I D , Drain-to-Source Current (A) 1.5 10 TJ = 150 C 1.0 TJ = 25 C 1 0.5 0.1 2.0 V DS = 25V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLL2703PBF 1000 VGS , Gate-to-Source Voltage (V) 800 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = 2.3A VDS = 24V VDS = 15V 12 C, Capacitance (pF) Ciss 600 9 Coss 400 6 200 Crss 3 0 1 10 100 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 C I D , Drain Current (A) 100us 10 TJ = 25 C 1 1ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLL2703PBF 4.0 V DS VGS RD I D , Drain Current (A) 3.0 RG 5.0V D.U.T. + - VDD 2.0 Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 1 10 100 1000 PDM t1 t2 0.1 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLL2703PBF EAS , Single Pulse Avalanche Energy (mJ) 500 TOP 400 15V BOTTOM ID 1.7A 3.1A 3.9A VDS L DRIVER 300 RG 10V D.U.T IAS tp + V - DD 200 A 0.01 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5.0 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRLL2703PBF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING T HIS IS AN IRFL014 PART NUMBER INT ERNAT IONAL RECT IFIER LOGO LOT CODE AXXXX FL014 314P A = AS S EMBLY S IT E DAT E CODE CODE (YYWW) YY = YEAR WW = WEEK P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) T OP BOT T OM www.irf.com 7 IRLL2703PBF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010) TR 2.05 (.080) 1.95 (.077) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 16.30 (.641) 15.70 (.619) 2.30 (.090) 2.10 (.083) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. 50.00 (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/04 8 www.irf.com |
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